"Design and Realization of a Credit Card Size Driver Stage for High Power Thyristor Based Devices with Integrated MOS Structure"
Author: Michael Bragard, Jan Gottschlich, Rik W. De Doncker
The Emitter Turn-off Thyristor (ETO) is an advantageous concept in sense of a MOS gated thyristor device. The innovative integration of the MOSFETs inside the press-pack housing allows a cable connection between the high power device and the external gate driver. After a short introduction, this paper focuses on the design and the realization of the external driver stage. Besides a mechanical and thermal decoupling of the driver from the high voltage device, the advantages are an extremely compact design in credit card dimensions. Today’s IGCT solutions require typically A4 Format (210 mm x 297 mm). Measurements of the prototype prove a significant lower power consumption, which stays far below 5 W at all operating conditions. Additional functionality is demonstrated by short circuit detection and handling.
Year of publishing: 2011
published in/at: 8th International Conference on Power Electronics - ECCE Asia, May 2011, The Shilla, Jeju, Korea